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| APM2701CG Dual Enhancement Mode MOSFET (N and P-Channel) Features * N-Channel 20V/3A, RDS(ON)=50m(typ.) @ VGS=4.5V RDS(ON)=90m(typ.) @ VGS=2.5V Pin Description Top View G1 S2 G2 1 2 3 6 5 4 D1 S1 D2 * P-Channel -20V/-1.5A, RDS(ON)=145m(typ.) @ VGS=-4.5V RDS(ON)=180m(typ.) @ VGS=-2.5V JSOT-6 Top View of JSOT-6 (6)D1 (2)S2 * * * Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) (1)G1 (3)G2 Applications * Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems (5)S1 (4)D2 N-Channel MOSFET P-Channel MOSFET Ordering and Marking Information APM2701 Lead Free Code Handling Code Temp. Range Package Code Package Code CG : JSOT-6 Operating Junction Temp. Range C : -55 to 150 C Handling Code TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM2701CG : M71X Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright (c) ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 1 www.anpec.com.tw APM2701CG Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RJA* Note: *Surface Mounted on 1in2 pad area, t 10sec. (TA = 25C unless otherwise noted) N Channel 20 10 3 VGS=4.5V 10 1 150 -55 to 150 TA=25C TA=100C 0.83 0.3 150 W C/W P Channel -20 10 -1.5 -6 -1 V A A C Unit Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300s Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Power Dissipation Thermal Resistance-Junction to Ambient Electrical Characteristics Symbol Parameter (TA = 25C unless otherwise noted) Test Condition APM2701CG Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250A VGS=0V, IDS=-250A VDS=16V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=85C VDS=-16V, VGS=0V TJ=85C VGS(th) IGSS Gate Threshold Voltage Gate Leakage Current VDS=VGS, IDS=250A VDS=VGS, IDS=-250A VGS=10V, VDS=0V VGS=4.5V, IDS=3A RDS(ON) a N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 -20 1 30 -1 -30 0.45 -0.45 0.6 -0.6 1 -1 100 100 50 145 90 180 70 190 110 235 V A V nA Drain-Source On-State Resistance VGS=-4.5V, IDS=-1.5A VGS=2.5V, IDS=1.7A VGS=-2.5V, IDS=-1A m Copyright (c) ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 2 www.anpec.com.tw APM2701CG Electrical Characteristics (Cont.) Symbol Parameter (TA = 25C unless otherwise noted) APM2701CG Min. Typ. Max. Test Condition Unit Static Characteristics (Cont.) VSD a Diode Forward Voltage b ISD=0.5A, V GS=0V ISD=-0.5A, V GS =0V N-Ch P-Ch 0.7 -0.7 1.3 -1.3 V Dynamic Characteristics C iss Input Capacitance N-Channel VGS =0V, VDS =10V, Frequency=1.0MHz P-Channel VGS =0V, VDS =-10V, Frequency=1.0MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch 270 300 70 50 50 30 6 6 5 8 12 10 6 5 12 10 10 12 23 15 12 10 ns pF C oss Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time C rss td(ON) Tr Turn-on Rise Time N-Channel VDD=10V, R L=10, IDS=1A, VGEN =4.5V, R G=6 P-Channel VDD=-10V, R L=10, IDS=-1A, VGEN =-4.5V, R G=6 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch td(OFF) Turn-off Delay Time Tf Turn-off Fall Time b Gate Charge Characteristics Qg Total Gate Charge N-Ch N-Channel VDS =10V, VGS =4.5V, IDS=3A P-Channel VDS =-10V, V GS=-4.5V, IDS=-1.5A P-Ch N-Ch P-Ch N-Ch P-Ch 5 4 0.5 0.6 1.6 1 6.5 6 nC Q gs Gate-Source Charge Q gd Notes: Gate-Drain Charge a : Pulse test ; pulse width 300s, duty cycle 2%. b : Guaranteed by design, not subject to production testing. Copyright (c) ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 3 www.anpec.com.tw APM2701CG Typical Characteristics N-Channel Power Dissipation 1.0 Drain Current 3.5 3.0 0.8 0.6 ID - Drain Current (A) 0 20 40 60 80 100 120 140 160 2.5 2.0 1.5 1.0 0.5 Ptot - Power (W) 0.4 0.2 0.0 0.0 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (C) Tj - Junction Temperature (C) Safe Operation Area Normalized Transient Thermal Resistance 50 2 1 Thermal Transient Impedance 10 ID - Drain Current (A) it Lim n) s(o Rd Duty = 0.5 0.2 0.1 300s 1 1ms 10ms 0.1 0.05 0.02 0.01 Single Pulse Mounted on 1in pad o RJA : 150 C/W 2 0.1 100ms 1s DC TA=25 C 0.01 0.1 o 1 10 100 0.01 1E-4 1E-3 0.01 0.1 1 10 30 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright (c) ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 4 www.anpec.com.tw APM2701CG Typical Characteristics (Cont.) Output Characteristics 12 VGS= 3,4,5,6,7,8,9,10V 10 2.5V Drain-Source On Resistance 0.14 0.12 VGS=2.5V RDS(ON) - On - Resistance () ID - Drain Current (A) 0.10 0.08 0.06 0.04 0.02 0.00 8 6 2V 4 VGS=4.5V 2 1.5V 0 0 1 2 3 4 5 0 2 4 6 8 10 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 10 9 8 1.8 1.6 Gate Threshold Voltage IDS =250A Normalized Threshold Voltage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 ID - Drain Current (A) 7 6 5 4 3 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Tj=125 C o o Tj=25 C Tj=-55 C o 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (C) Copyright (c) ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 5 www.anpec.com.tw APM2701CG Typical Characteristics (Cont.) Drain-Source On Resistance 2.0 VGS = 4.5V 1.8 IDS = 3A Source-Drain Diode Forward 10 Normalized On Resistance 1.6 Tj=150 C o 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 RON@Tj=25 C: 50m 0 25 50 75 100 125 150 o IS - Source Current (A) 1.4 1 Tj=25 C o 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Tj - Junction Temperature (C) VSD - Source - Drain Voltage (V) Capacitance 500 Frequency=1MHz Gate Charge 5 VDS= 10V IDS = 3A 4 400 VGS - Gate - source Voltage (V) C - Capacitance (pF) 300 Ciss 3 200 2 100 Crss 0 Coss 1 0 4 8 12 16 20 0 0 1 2 3 4 5 6 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright (c) ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 6 www.anpec.com.tw APM2701CG Typical Characteristics P-Channel Power Dissipation 1.0 1.8 Drain Current 0.8 1.5 -ID - Drain Current (A) Ptot - Power (W) 1.2 0.6 0.9 0.4 0.6 0.2 0.3 0.0 0.0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (C) Tj - Junction Temperature (C) Safe Operation Area Normalized Transient Thermal Resistance 50 2 1 Thermal Transient Impedance 10 -ID - Drain Current (A) Duty = 0.5 it im )L (on s Rd 0.2 0.1 1 300s 1ms 10ms 0.1 0.05 0.02 0.01 Mounted on 1in pad o RJA : 150 C/W 2 0.1 100ms 1s DC TA=25 C o Single Pulse 0.01 0.1 1 10 100 0.01 1E-4 1E-3 0.01 0.1 1 10 30 -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright (c) ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 7 www.anpec.com.tw APM2701CG Typical Characteristics (Cont.) Output Characteristics 6 VGS= -3,-4,-5,-6,-7,-8,-9,-10V -2V 0.30 Drain-Source On Resistance RDS(ON) - On - Resistance () 5 0.25 -ID - Drain Current (A) 4 0.20 VGS= -2.5V 3 0.15 VGS= -4.5V 2 0.10 1 0.05 0 0.00 0 1 2 3 4 5 0 1 2 3 4 5 6 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics 6 Tj=25 C o Gate Threshold Voltage 1.8 1.6 IDS = -250A Normalized Threshold Voltage 5 Tj=-55 C o 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -ID - Drain Current (A) 4 Tj=125 C o 3 2 1 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0.0 -50 -25 0 25 50 75 100 125 150 -VGS - Gate - Source Voltage (V) Tj - Junction Temperature (C) Copyright (c) ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 8 www.anpec.com.tw APM2701CG Typical Characteristics (Cont.) Drain-Source On Resistance 1.8 VGS = -4.5V 1.6 IDS = -1.5A Source-Drain Diode Forward 6 Normalized On Resistance 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 RON@Tj=25 C: 145m 0 25 50 75 100 125 150 o Tj=150 C o -IS - Source Current (A) 1 Tj=25 C o 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Tj - Junction Temperature (C) -VSD - Source - Drain Voltage (V) Capacitance 500 Frequency=1MHz 5 VDS= -10V IDS= -1.5A 4 Gate Charge 400 300 Ciss -VGS - Gate - source Voltage (V) C - Capacitance (pF) 3 200 2 100 Coss Crss 0 1 0 0 4 8 12 16 20 0 1 2 3 4 5 -VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright (c) ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 9 www.anpec.com.tw APM2701CG Packaging Information JSOT-6 b K1 C K E1 E2 D Dim A A1 A2 b c D E E1 E2 e L ? ?1 Millimeters Min. Max. 0.935 1.10 0.01 0.10 0.925 1.00 0.25 0.40 0.10 0.20 2.95 3.10 2.50 3.00 2.30 2.50 2.65 3.05 0.95 BSC 0.30 0.60 0 8 7 N0M. A1 A2 A Inches Min. Max. 0.037 0.043 0.0004 0.004 0.036 0.039 0.010 0.016 0.004 0.008 0.116 0.122 0.098 0.118 0.091 0.098 0.104 0.120 0.037 BSC 0.012 0.024 0 8 7 N0M. Copyright (c) ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 10 L e e E www.anpec.com.tw APM2701CG Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition TP (IR/Convection or VPR Reflow) tp Critical Zone T L to T P Ramp-up Temperature TL Tsmax tL Tsmin Ramp-down ts Preheat 25 t 25 C to Peak Tim e Classificatin Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds 6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright (c) ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 11 www.anpec.com.tw APM2701CG Classificatin Reflow Profiles(Cont.) Table 1. SnPb Entectic Process - Package Peak Reflow Temperatures 3 3 Package Thickness Volum e m m Volume mm <350 350 <2.5 m m 240 +0/-5C 225 +0/-5C 2.5 m m 225 +0/-5C 225 +0/-5C Table 2. Pb-free Process - Package Classification Reflow Temperatures 3 3 3 Package Thickness Volume mm Volume mm Volume mm <350 350-2000 >2000 <1.6 m m 260 +0C* 260 +0C* 260 +0C* 1.6 m m - 2.5 m m 260 +0C* 250 +0C* 245 +0C* 2.5 m m 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0C. For example 260C+0C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright (c) ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 12 www.anpec.com.tw APM2701CG Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 1781 B C J T1 8.4 2 P1 T2 1.5 0.3 Ao 72 1.0 13.0 + 0.2 2.5 0.15 D D1 1.5 +0.1 Po 4.0 0.1 W 8.0+ 0.3 - 0.3 Bo P 4 0.1 Ko 1.4 0.1 E 1.75 0.1 t 0.20.03 SOT-23-6 F 3.5 0.05 1.5 +0.1 2.0 0.1 3.15 0.1 3.2 0.1 (mm) Cover Tape Dimensions Application SOT-23-6 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright (c) ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 13 www.anpec.com.tw |
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